Fermi-Level Pinning Mechanism in MoS2 Field-Effect Transistors Developed by Thermionic Emission Theory

被引：8

作者：

Zhang, Yu ^{[1
,2
]}

Chen, Xiong ^{[2
]}

Zhang, Hao ^{[2
]}

Wei, Xicheng ^{[1
]}

Guan, Xiangfeng ^{[2
]}

Wu, Yonghua ^{[2
]}

Hu, Shaozu ^{[2
]}

Zheng, Jiale ^{[2
]}

Wang, Guidong ^{[2
]}

Qiu, Jiawen ^{[2
]}

Wang, Jun ^{[3
]}

机构：

[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China

[2] Fujian Jiangxia Univ, Coll Elect & Informat Sci, Fujians Univ, Organ Optoelect Engn Res Ctr, Fuzhou 350108, Peoples R China

[3] Shanghai Inst Technol, Coll Sci, Shanghai 201418, Peoples R China

来源：

APPLIED SCIENCES-BASEL | 2020年 / 10卷 / 08期

关键词：

fermi-level pinning; MoS2; field-effect transistors; thermionic emission theory; SCHOTTKY BARRIERS;

D O I：

10.3390/app10082754

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Molybdenum disulfide (MoS2) field-effect transistors (FETs) with four different metallic electrodes (Au,Ag,Al,Cu) of drain-source were fabricated by mechanical exfoliation and vacuum evaporation methods. The mobilities of the devices were (Au) 21.01, (Ag) 23.15, (Al) 5.35 and (Cu) 40.52 cm(2)/Vs, respectively. Unpredictably, the on-state currents of four devices were of the same order of magnitude with no obvious difference. For clarifying this phenomenon, we calculated the Schottky barrier height (SBH) of the four metal-semiconductor contacts by thermionic emission theory and confirmed the existence of Fermi-level pinning (FLP). We suppose the FLP may be caused by surface states of the semiconductor produced from crystal defects.

引用

页数：9

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