Electrical properties of single CuO nanowires for device fabrication: Diodes and field effect transistors

被引：29

作者：

Florica, Camelia ^{[1
]}

Costas, Andreea ^{[1
]}

Boni, Andra Georgia ^{[1
]}

Negrea, Raluca ^{[1
]}

Ion, Lucian ^{[2
]}

Preda, Nicoleta ^{[1
]}

Pintilie, Lucian ^{[1
]}

Enculescu, Ionut ^{[1
]}

机构：

[1] Natl Inst Mat Phys, Bucharest 077125, Magurele, Romania

[2] Univ Bucharest, Fac Phys, Magurele 77125, Ilfov, Romania

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 22期

关键词：

LARGE-SCALE SYNTHESIS; NANOSTRUCTURES SYNTHESIS; NANORIBBONS; NANOFIBERS; ROUTE; TEMPERATURE; PERFORMANCE; NANOFLOWERS; TRANSPORT; NANORODS;

D O I：

10.1063/1.4921914

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High aspect ratio CuO nanowires are synthesized by a simple and scalable method, thermal oxidation in air. The structural, morphological, optical, and electrical properties of the semiconducting nanowires were studied. Au-Ti/CuO nanowire and Pt/CuO nanowire electrical contacts were investigated. A dominant Schottky mechanism was evidenced in the Au-Ti/CuO nanowire junction and an ohmic behavior was observed for the Pt/CuO nanowire junction. The Pt/CuO nanowire/Pt structure allows the measurements of the intrinsic transport properties of the single CuO nanowires. It was found that an activation mechanism describes the behavior at higher temperatures, while a nearest neighbor hopping transport mechanism is characteristic at low temperatures. This was also confirmed by four-probe resistivity measurements on the single CuO nanowires. By changing the metal/semiconductor interface, devices such as Schottky diodes and field effect transistors based on single CuO p-type nanowire semiconductor channel are obtained. These devices are suitable for being used in various electronic circuits where their size related properties can be exploited. (c) 2015 AIP Publishing LLC.

引用

页数：5

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