Strain Reduction in Silicon-on-Sapphire by Wafer Bonding

被引：0

作者：

Imthurn, G. P. ^{[1
]}

Miscione, A. M. ^{[1
]}

Landry, K. ^{[2
]}

Vaufredaz, A. ^{[2
]}

Barge, T. ^{[2
]}

Lagahe-Blanchard, C. ^{[2
]}

机构：

[1] Peregrine Semicond Corp, 9380 Carroll Pk Dr, San Diego, CA 92121 USA

[2] Soitec Parc Technol Fontaine, F-38926 Crolles, France

来源：

2011 IEEE INTERNATIONAL SOI CONFERENCE | 2011年

关键词：

STRESS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页数：2

共 50 条

[1] DISLOCATION-FREE SILICON-ON-SAPPHIRE BY WAFER BONDING
ABE, T
OHKI, K
UCHIYAMA, A
NAKAZAWA, K
NAKAZATO, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 514 - 518
[2] Dislocation-free silicon on sapphire by wafer bonding
Abe, Takao
Ohki, Konomu
Uchiyama, Atsuo
Nakazawa, Kazushi
Nakazato, Yasuyuki
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (1 B): : 514 - 518
[3] DIFFUSED DIODES IN SILICON-ON-SAPPHIRE
DUMIN, DJ
SILVER, RS
SOLID-STATE ELECTRONICS, 1968, 11 (03) : 353 - +
[4] RADIATION HARDENED SILICON-ON-SAPPHIRE
HANDEN, J
VELORIC, H
ELECTRONIC ENGINEERING, 1984, 56 (685): : 61 - 62
[5] SILICON-ON-SAPPHIRE BIPOLAR TRANSISTORS
HEIMAN, FP
ROBINSON, PH
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (06) : 433 - &
[6] THE ROUGHNESS OF HETEROEPITAXIAL SILICON-ON-SAPPHIRE
SPINK, M
THOMAS, CB
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (11) : 1123 - 1125
[7] USE OF STRAIN GAUGES WITH A SILICON-ON-SAPPHIRE STRUCTURE FOR THERMOPHYSICAL EXPERIMENTS.
Kukarin, V.F.
Kuskova, N.V.
Lur'e, G.I.
Martynets, V.G.
Matizen, E.V.
Stuchebnikov, V.M.
Khasikov, V.V.
Measurement Techniques, 1985, 28 (12) : 1085 - 1087
[8] Raman scattering characterization of strain in GaAs heteroepitaxial films grown on sapphire and silicon-on-sapphire substrates
Humphreys, T.P., 1600, (28):
[9] Silicon-on-Sapphire (SOS) Technology.
Schwob, P.
Bulletin de l'Association Suisse des Electriciens, 1977, 68 (02): : 60 - 65
[10] Silicon-on-Sapphire, a Replacement for Gallium Arsenide?
Imthurn, George. P.
2009 IEEE INTERNATIONAL SOI CONFERENCE, 2009, : 85 - 87

← 1 2 3 4 5 →