Magnetic and junction properties of half-metallic double-perovskite thin films

被引：22

作者：

Asano, H ^{[1
]}

Koduka, N ^{[1
]}

Imaeda, K ^{[1
]}

Sugiyama, M ^{[1
]}

Matsui, M ^{[1
]}

机构：

[1] Nagoya Univ, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2005年 / 41卷 / 10期

关键词：

double perovskite; epitaxial film; half-metallic feromagnet; magnetic tunnel junction;

D O I：

10.1109/TMAG.2005.854836

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the magnetic, electrical, and microstructural properties of epitaxial thin films with an ordered double-perovskite structure. Sr-2 FeMoO6 (SFMO) and Sr-2 CrReO6 (SCRO) films, have been grown by sputtering onto the lattice-matched substrates of Ba-0.4 Sr-0.6 TiO3 -buffered and bare SrTiO3, respectively. These films exhibit high saturation magnetization M-s values (3.8 mu(B)/f.u. for SFMO and 0-9 mu(B)/f.u. for SCRO), which are close to the expected values for their half-metallicity, and high curie temperature T, values (385 K for SFMO and 620 K for SCRO). Surface analyzes by AFM and XPS indicate that these films have atomically flat and well-defined surfaces, which are free from any surface precipitates. This enables us to employ a standard photolithographic process for fabricating magnetic tunnel junctions based on these films. SFMO junctions with a native barrier formed by surface oxidation of a SFMO base-electrode and a Co counterelectrode have shown a tunnel magnetoresistance ratio of 10% at 4.2 K.

引用

页码：2811 / 2813

页数：3

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