Modeling the Influence of the Acceptor-Type Trap on the 2DEG Density for GaN MIS-HEMTs

被引：10

作者：

Shi, Yijun ^{[1
]}

Chen, Wanjun ^{[1
,2
]}

Sun, Ruize ^{[1
]}

Liu, Chao ^{[1
]}

Xin, Yajie ^{[1
]}

Xia, Yun ^{[1
]}

Wang, Fangzhou ^{[1
]}

Xu, Xiaorui ^{[1
]}

Deng, Xiaochuan ^{[1
]}

Chen, Tangsheng ^{[2
]}

Zhang, Bo ^{[1
,2
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[2] Nanjing Elect Devices Inst, Sci & Technol Monolith Integrated Circuits & Modu, Nanjing 210016, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2020年 / 67卷 / 06期

基金：

中国国家自然科学基金;

关键词：

2-dimensional electron gas (2DEG) density; acceptor-type trap; Fermi energy; GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT); subthreshold region; CURRENT COLLAPSE; CHARGE-DENSITY; ALGAN/GAN; INTERFACE; SURFACE;

D O I：

10.1109/TED.2020.2986241

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, an analytical model on the influence of the acceptor-type trap on the 2-dimensional electron gas (2DEG) density is proposed for GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). Based on the charge-control method, a numerical analysis of the 2DEG in both the subthreshold and above-threshold regions is carried out with the deep-level and band-tail acceptor-type traps at the AlGaN/insulator interface and the AlGaN/GaN interface. In particular, the influence of the acceptor-type trap on the 2DEG density and the gate-control capability in the subthreshold region is modeled for the first time. The results have shown that the acceptor-type trap plays an important role in weakening the gate-control capability of the 2DEG density in the subthreshold region. The experimental results, together with the modeling and numerical calculations, have shown consistent 2DEG density values under various gate voltages, which verify the proposed model.

引用

页码：2290 / 2296

页数：7

共 32 条

[1] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J].