Photoluminescent Si/SiOx nanoparticle network by near atmospheric plasma-enhanced chemical vapour deposition

被引：1

作者：

Yang, Q. Y. ^{[1
]}

Wang, D. X. ^{[2
]}

Guo, Y. ^{[1
]}

Ding, K. ^{[1
]}

Xu, J. Z. ^{[1
]}

Shi, J. J. ^{[1
]}

Zhang, J. ^{[1
]}

机构：

[1] Donghua Univ, Dept Appl Phys, Shanghai 201620, Peoples R China

[2] Donghua Univ, Coll Mat Sci, Shanghai 201620, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2011年 / 44卷 / 44期

关键词：

LUMINESCENCE CENTER MODEL; POROUS SILICON; RED PHOTOLUMINESCENCE; ELECTRONIC STATES; THIN-FILMS; OXYGEN; SI; NANOCRYSTALLINE; NANOSTRUCTURES; MULTILAYERS;

D O I：

10.1088/0022-3727/44/44/445201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A very fast and simple near atmospheric plasma-enhanced chemical vapour deposition method modulated by a pulsed negative bias voltage is newly developed to yield a Si/SiOx nanoparticle-linked network structure, which emitted enhanced 410 nm photoluminescence (PL) at room temperature. Hydrogen dissociation, oxidation and polarization of the silane plasma-generated active particles could be tuned by the magnitude of bias voltage. The porosity and oxidation of this network structure and the intensity of its PL spectrum at 410 nm were observed to increase with the bias voltage. The large surface area of the Si/SiOx nanoparticle-linked network intensified the radiative recombination centre effect and caused the PL emission enhancement.

引用

页数：5

共 28 条

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