Various thermal parameters investigation of 3C-SiC nanoparticles at the different heating rates

被引:22
作者
Huseynov, Elchin M. [1 ,2 ,3 ]
Naghiyev, Tural G. [3 ]
机构
[1] Natl Ctr Nucl Res, Dept Nanotechnol & Radiat Mat Sci, Baku 1073, Azerbaijan
[2] Azerbaijan Natl Acad Sci, Inst Radiat Problems, 9 B Vahabzade, Baku 1143, Azerbaijan
[3] Azerbaijan State Univ Econ UNEC, Composite Mat Sci Res Ctr, Dept Chem & Phys, 6 Istiqlaliyyat Str, Baku 1001, Azerbaijan
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2022年 / 128卷 / 02期
关键词
Nanocrystalline; 3C-SiC; Nanomaterials; Thermal parameters; THERMODYNAMICS; SPECTROSCOPY; ADSORPTION; FREQUENCY; BEHAVIOR; SCALE;
D O I
10.1007/s00339-022-05265-x
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Several thermal parameters were analyzed for nanocrystalline silicon carbide (3C-SiC) particles at the performed depending on the thermal processing rate. The hydroxyl groups on the surface of nanocrystalline 3C-SiC particles have been investigated as a function of temperature and heating rate. Specific heat capacity and Gibbs energy of silicon carbide nanoparticles have been determined in the temperature range of 300-1270 K at various heating rates. The enthalpy and the entropy were calculated at different thermal processing rates (theoretical calculations are confirmed based on experimental results). Experimental results obtained for all thermophysical parameters were comparatively studied at different thermal processing rates.
引用
收藏
页数:8
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