Various thermal parameters investigation of 3C-SiC nanoparticles at the different heating rates

Several thermal parameters were analyzed for nanocrystalline silicon carbide (3C-SiC) particles at the performed depending on the thermal processing rate. The hydroxyl groups on the surface of nanocrystalline 3C-SiC particles have been investigated as a function of temperature and heating rate. Specific heat capacity and Gibbs energy of silicon carbide nanoparticles have been determined in the temperature range of 300-1270 K at various heating rates. The enthalpy and the entropy were calculated at different thermal processing rates (theoretical calculations are confirmed based on experimental results). Experimental results obtained for all thermophysical parameters were comparatively studied at different thermal processing rates.