Spin filling of valley-orbit states in a silicon quantum dot

被引：58
作者：
Lim, W. H. [1 ]
Yang, C. H. [1 ]
Zwanenburg, F. A. [1 ]
Dzurak, A. S. [1 ]
机构：
[1] Univ New S Wales, Sch Elect Engn & Telecommun, Ctr Quantum Computat & Commun Technol, Sydney, NSW 2052, Australia
来源：
NANOTECHNOLOGY | 2011年 / 22卷 / 33期
基金：
澳大利亚研究理事会;
关键词：
D O I：
10.1088/0957-4484/22/33/335704
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N = 27. The observed evolution of addition energies with parallel magnetic field reveals the spin filling of electrons into valley-orbit states. We find a splitting of 0.10 meV between the ground and first excited states, consistent with theory and placing a lower bound on the valley splitting. Our results provide optimism for the realisation in the near future of spin qubits based on silicon quantum dots.
引用
收藏
页数：6
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