An Analytical Model for Tunnel Barrier Modulation in Triple Metal Double Gate TFET

被引：86
作者：
Bagga, Navjeet [1 ]
Sarkar, Subir Kumar [1 ]
机构：
[1] Jadavpur Univ, Dept Elect & Telecommun Engn, Kolkata 700032, India
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 07期
关键词：
Ambipolar behavior; band-to-band tunneling; Poisson's equation; tunnel FET (TFET); work function; FIELD-EFFECT TRANSISTOR; OPTIMIZATION; FET;
D O I：
10.1109/TED.2015.2434276
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytical model for tunnel barrier modulation in triple metal double gate tunnel FET is presented for the first time in this paper. Three different metals over the channel region assist to form a barrier in the channel which restricts the reverse tunneling of the carrier, i.e., tunneling from drain to source. The choice of three metals with different work functions helps to increase the ON-current and also to form a barrier in the channel, which reduces the OFF-current. The surface potential and the electric field are analytically modeled by solving 2-D Poisson's equation and Kane's model is used to calculate the tunneling current. The analytical results are verified with SILVACO ATLAS simulated results.
引用
收藏
页码：2136 / 2142
页数：7
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