Optical phonons of hexagonal AlxGa1-xN:: Simulation and experiment

被引：9
作者：
Liu, MS [1 ]
Bursill, LA
Prawer, S
机构：
[1] Univ Melbourne, Sch Phys, Parkville, Vic 3052, Australia
[2] Swinburne Univ Technol, Ctr Mol Simulat, Hawthorn, Vic 3122, Australia
[3] Swinburne Univ Technol, Sch Informat Technol, Hawthorn, Vic 3122, Australia
来源：
JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 04期
关键词：
D O I：
10.1063/1.1384508
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The behavior of longitudinal and transverse optical phonons in hexagonal AlxGa1-xN is derived theoretically and experimentally as a function of the concentration x(0 less than or equal tox less than or equal to1). The theoretical approach is based on a modified random element isodisplacement model which considers the interactions with the nearest neighbor and second neighbor atoms. We find "one-mode" behavior in AlxGa1-xN in which the phonon frequency in general varies continuously and approximately linearly with x. The theoretical simulations are in good agreement with Raman scattering experiments, which also reveal that both the linewidth and intensity of the optical phonons strongly depend on the concentration. (C) 2001 American Institute of Physics.
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页码：1761 / 1767
页数：7
相关论文
共 37 条
  • [1] Akasaki I, 2000, MRS INTERNET J N S R, V5, part. no.
  • [2] [Anonymous], 1997, BLUE LASER DIODE GAN, DOI DOI 10.1007/978-3-662-03462-0
  • [3] Optical phonons in ZnxCd1-xSe thin films
    AvendanoLopez, J
    CastilloAlvarado, FL
    EscamillaEsquivel, A
    ContrerasPuente, G
    OrtizLopez, J
    ZelayaAngel, O
    [J]. SOLID STATE COMMUNICATIONS, 1996, 100 (01) : 33 - 36
  • [4] POLARIZED RAMAN-SPECTRA IN GAN
    AZUHATA, T
    SOTA, T
    SUZUKI, K
    NAKAMURA, S
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1995, 7 (10) : L129 - L133
  • [5] Resonant Raman scattering in GaN/(AlGa)N single quantum wells
    Behr, D
    Niebuhr, R
    Wagner, J
    Bachem, KH
    Kaufmann, U
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (03) : 363 - 365
  • [6] Raman analysis of the configurational disorder in AlxGa1-xN films
    Bergman, L
    Bremser, MD
    Perry, WG
    Davis, RF
    Dutta, M
    Nemanich, RJ
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (15) : 2157 - 2159
  • [7] BORN M, 1968, DYNAMICAL THEORY CRY
  • [8] APPLICATION OF A MODIFIED RANDOM-ELEMENT-ISODISPLACEMENT MODEL TO LONG-WAVELENGTH OPTIC PHONONS OF MIXED CRYSTALS
    CHANG, IF
    MITRA, SS
    [J]. PHYSICAL REVIEW, 1968, 172 (03): : 924 - &
  • [9] Raman study of the optical phonons in AlxGa1-xN alloys
    Cros, A
    Angerer, H
    Ambacher, O
    Stutzmann, M
    Hopler, R
    Metzger, T
    [J]. SOLID STATE COMMUNICATIONS, 1997, 104 (01) : 35 - 39
  • [10] Cros A, 1997, MRS INTERNET J N S R, V2, part. no.
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