Optical phonons of hexagonal AlxGa1-xN:: Simulation and experiment

被引：9

作者：

Liu, MS ^{[1
]}

Bursill, LA

Prawer, S

机构：

[1] Univ Melbourne, Sch Phys, Parkville, Vic 3052, Australia

[2] Swinburne Univ Technol, Ctr Mol Simulat, Hawthorn, Vic 3122, Australia

[3] Swinburne Univ Technol, Sch Informat Technol, Hawthorn, Vic 3122, Australia

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 04期

关键词：

D O I：

10.1063/1.1384508

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The behavior of longitudinal and transverse optical phonons in hexagonal AlxGa1-xN is derived theoretically and experimentally as a function of the concentration x(0 less than or equal tox less than or equal to1). The theoretical approach is based on a modified random element isodisplacement model which considers the interactions with the nearest neighbor and second neighbor atoms. We find "one-mode" behavior in AlxGa1-xN in which the phonon frequency in general varies continuously and approximately linearly with x. The theoretical simulations are in good agreement with Raman scattering experiments, which also reveal that both the linewidth and intensity of the optical phonons strongly depend on the concentration. (C) 2001 American Institute of Physics.

引用

页码：1761 / 1767

页数：7

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