Selective wet etching of lattice-matched InGaAs/InAlAs on InP and metamorphic InGaAs/InAlAs on GaAs using succinic acid hydrogen peroxide solution

被引：34

作者：

Fourre, H

Diette, F

Cappy, A

机构：

[1] Inst. d'Electron. Micro-Electron. N., U.M.R.C.N.R.S 9929, Dept. Hyperfrequence S., 59652 Villeneuve d'Ascq Cedex, Cite Sci.-Avenue Poincaré

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 05期

关键词：

D O I：

10.1116/1.588543

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A selectivity study of the etching of lattice matched (LM) InCaAs/InAlAs on InP and metamorphic (MM) InGaAs/InAlAs on GaAs in succinic acid: hydrogen peroxide solutions is reported. Selectivities as high as 70 and 1030 are? respectively, obtained for the LM and MM InGaAs on InAlAs. Observations and measurements with an atomic force microscope of narrow recess and under-resist etch on LM InP materials are also presented. The ability of these solutions for fabrication of InGaAs/InAlAs heterojunction field effect transistors is discussed. (C) 1996 American Vacuum Society.

引用

页码：3400 / 3402

页数：3

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