Thermodynamic and photochemical stability of low interface state density Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy

被引：29

作者：

Passlack, M ^{[1
]}

Hong, MW ^{[1
]}

Mannaerts, JP ^{[1
]}

Opila, RL ^{[1
]}

Ren, F ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 03期

关键词：

D O I：

10.1063/1.118040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermodynamic and photochemical stability of Ga2O3-GaAs interfaces fabricated using in situ multiple-chamber molecular beam epitaxy has been investigated, The Ga2O3 films were deposited on clean, atomically ordered (100) GaAs surfaces using a molecular beam of gallium oxide. Thermally induced degradation of electronic interface properties such as interface recombination velocity S (5750 +/- 1250 cm/s) and interface state density D-it(mid-10(10) cm(-2) eV(-1) range) has not been observed after rapid thermal annealing at 800 degrees C. Furthermore, no interface degradation has been detected during exposure to high intensity laser light. The preservation of excellent electronic interface properties and the absence of interfacial chemical reactions are attributed to AsxOy and elemental As free Ga2O3-GaAs interfaces. (C) 1996 American Institute of Physics.

引用

页码：302 / 304

页数：3

共 15 条

[1] UNPINNED GALLIUM OXIDE GAAS INTERFACE BY HYDROGEN AND NITROGEN SURFACE PLASMA TREATMENT [J].