Hydrogen ion motion in amorphous silicon solar cells at elevated temperatures

被引:17
作者
Carlson, DE
Rajan, K
机构
[1] Solarex, Newtown, PA 18940
关键词
D O I
10.1063/1.117610
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electric field-enhanced degradation has been observed in amorphous silicon solar cells exposed to intense illumination (45-60 suns) at elevated temperatures (>160 degrees C). The front tin oxide contacts of both p-i-n and n-i-p cells darken significantly when a strong reverse bias is applied at elevated temperatures and under intense illumination. Compositional profiles of the cells show that a strong reverse bias causes a depletion of hydrogen near the contacts. These results are interpreted in terms of proton motion near the p/i interface of p-i-n cells and negative hydrogen ion motion near the i/n interface. (C) 1996 American Institute of Physics.
引用
收藏
页码:1447 / 1449
页数:3
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