Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates

被引：3
作者：
Chen, Z
Chua, SJ
Han, PD
Liu, XL
Lu, DC
Zhu, QS
Wang, ZG
Tripathy, S
机构：
[1] Inst Mat Res & Engn, Singapore 117602, Singapore
[2] Singapore MIT Alliance, Singapore 117576, Singapore
[3] Inst Semicond, Lab Semicond Mat Sci, Beijing, Peoples R China
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2005年 / 27卷 / 03期
关键词：
GaN; InGaN; quantum dots; photoluminescence;
D O I：
10.1016/j.physe.2004.12.010
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this study, we report comparative luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). High-density InGaN quantum dots (QDs) are formed on GaN templates by decreasing the growth temperature and increasing the adatom hopping-barrier through surface passivation. Atomic force microscopy (AFM) has been employed to estimate the size and height of these dots. Photoluminescence (PL) spectra recorded from (1120) InGaN QDs/(1102) sapphire show much stronger emission intensity compared to spectra recorded from (0001) InGaN QDs/(0001) sapphire. Due to the absence of strong spontaneous polarization and piezoelectric field, such (1150) InGaN QDs in the active layers would lead to high efficiency light emitting devices. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：314 / 318
页数：5
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