Light coupling between vertical III-As nanowires and planar Si photonic waveguides for the monolithic integration of active optoelectronic devices on a Si platform

被引:13
作者
Giuntoni, Ivano [1 ]
Geelhaar, Lutz [1 ]
Bruns, Juergen [2 ]
Riechert, Henning [1 ]
机构
[1] Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany
[2] Tech Univ Berlin, Fachgebiet Hochfrequenztech, Einsteinufer 25, D-10587 Berlin, Germany
关键词
SILICON;
D O I
10.1364/OE.24.018417
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We present a new concept for the optical interfacing between vertical III-As nanowires and planar Si waveguides. The nanowires are arranged in a two-dimensional array which forms a grating structure on top of the waveguide. This grating enables light coupling in both directions between the components made from the two different material classes. Numerical simulations show that this concept permits a light extraction efficiency from the waveguide larger than 45% and a light insertion efficiency larger than 35%. This new approach would allow the monolithic integration of nanowire-based active optoelectronics devices, like photodetectors and light sources, on the Si photonics platform. (C) 2016 Optical Society of America
引用
收藏
页码:18417 / 18427
页数:11
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