Transmission electron microscopy on interface engineered superconducting thin films

被引:13
作者
Bals, S [1 ]
Van Tendeloo, G
Rijnders, G
Huijben, M
Leca, V
Blank, DHA
机构
[1] Univ Antwerp, RUCA, EMAT, B-2020 Antwerp, Belgium
[2] Univ Twente, Low Temp Div, Appl Phys & MESA Res Inst, NL-7500 AE Enschede, Netherlands
关键词
high resolution electron microscopy; interface structure; superconducting thin films;
D O I
10.1109/TASC.2003.812023
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Transmission electron microscopy is used to evaluate different deposition techniques, which optimize the microstructure and physical properties of superconducting thin films. High-resolution electron microscopy proves that the use of an YBa2Cu2Ox buffer layer can avoid a variable interface configuration in YBa2Cu3O7-delta thin films grown on SrTiO3. The growth can also be controlled at an atomic level by, using sub-unit cell layer epitaxy, which results in films with high quality and few structural defects. Epitaxial strain in Sr0.85La0.15CuO2 infinite layer thin films influences the critical temperature of these films, as well as the microstructure. Compressive stress is released by a modulated or a twinned microstructure, which eliminates superconductivity. On the other hand, also tensile strain seems to lower the critical temperature of the infinite layer.
引用
收藏
页码:2834 / 2837
页数:4
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