Novel velocity electric field relation for modelling of compound semiconductor field-effect transistors

被引：1

作者：

Madheswaran, M ^{[1
]}

Madhavan, A ^{[1
]}

Chakrabarti, P ^{[1
]}

机构：

[1] Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India

来源：

IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 1998年 / 145卷 / 03期

关键词：

compound semiconductors; field effect transistors;

D O I：

10.1049/ip-cds:19981824

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel empirical relation is proposed for the velocity-electric-field profile of compound semiconductors. The velocity-field curve in compound semiconductors (e.g. GaAs, InP etc.) has a peak which is followed by a negative-differential-resistance region in which the velocity decreases continuously with increase in the electric field. The proposed empirical fit is a two-piece nonlinear approximation, the first part being a third-order polynomial and the second part being an exponential relation to ensure the continuity and smoothness over the entire region. The accuracy of the model is confirmed by comparing and contrasting the proposed empirical curve with the available experimental and simulated results. The proposed model is expected to find useful application in analytical modelling of field-effect transistors.

引用

页码：170 / 174

页数：5

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