Hydrogen plasma induced crystallization of Si thin films by remote inductively coupled plasma source assistant pulsed dc twin magnetron sputtering

被引：0

作者：

Su, Yuanjun ^{[1
,2
]}

Xu, Jun ^{[1
]}

Dong, Chuang ^{[1
]}

Lu, Wenqi ^{[1
]}

机构：

[1] Dalian Univ Technol, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China

[2] Nissin Elect Dalian Univ Technol, Joint R&D Ctr, Dalian 116024, Peoples R China

来源：

SURFACE & COATINGS TECHNOLOGY | 2012年 / 206卷 / 14期

关键词：

Micro-crystalline silicon; Magnetron sputtering; Inductively coupled plasma; Langmuir probe; Optical emission spectrum; AMORPHOUS-SILICON; DEPOSITION; GROWTH; TEMPERATURE; MECHANISM;

D O I：

10.1016/j.surfcoat.2011.10.042

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Hydrogenated microcrystalline silicon thin films (mu c-Si:H) were deposited by remote inductively coupled plasma assistant pulsed dc twin magnetron sputtering at temperatures below 300 degrees C. The formation of mu c-Si:H was only found in the environment of hydrogen plasma, where Ar and H-2 mixed gas was used. In pure argon plasma or without the assistance of ICP in the Ar/H-2 gas mixtures, all the samples were amorphous structure. It suggested that ICP hydrogen plasma which enhanced the density and energy of H radicals played the key role in the formation of mu c-Si:H films. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：3159 / 3164

页数：6

共 22 条

[1] PLASMA DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON - STUDIES OF THE GROWTH SURFACE [J].