Electronic properties of borophene based heterojunctions with MoS2 and WSe2

被引：5

作者：

Wei, Jinlei ^{[1
,2
]}

Li, Wei ^{[2
]}

Pan, Jinghua ^{[2
]}

Chen, Wen ^{[2
]}

Jing, Sicheng ^{[2
]}

Liao, Bin ^{[1
]}

Bian, Baoan ^{[2
]}

Wang, Guoliang ^{[3
]}

机构：

[1] Beijing Normal Univ, Coll Nucl Sci & Technol, Beijing 100875, Peoples R China

[2] Jiangnan Univ, Sch Sci, Wuxi 214122, Peoples R China

[3] Guangdong Guangxin Ion Beam Technol Co Ltd, Guangzhou 510000, Peoples R China

来源：

CHEMICAL PHYSICS | 2022年 / 562卷

关键词：

Heterojunction; Density functional theory; Electronic structure; Optical property; TRANSITION; CAPACITY; ION;

D O I：

10.1016/j.chemphys.2022.111666

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The electronic and optical properties of vertical delta 6-borophene/MoS2(WSe2) heterojunctions are investigated by density functional theory. It is found that vertical delta 6-borophene/MoS2(WSe2) heterojunctions present different electronic properties. Particularly, the different stacking directions of delta(6)-borophene influence the electronic properties of the heterojunctions, showing its anisotropic characteristics. The external electric field can adjust the Schottky contact type and Schottky barrier height of the heterojunction. Compared with monolayer MoS2 and WSe2, the stacked heterojunctions expand the range and sensitivity of photoconductivity. This suggests that the stack changes the electronic and optical properties of the monolayer MoS2 and WSe2, and the external electric field causes a changed Schottky contact, thereby providing a possibility for the design of optoelectronic devices with tunable Schottky contact and good optical characteristics.

引用

页数：6

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