Control of ferromagnetism via electron doping in In2O3:Cr

被引：67

作者：

Raebiger, Hannes ^{[1
]}

Lany, Stephan ^{[1
]}

Zunger, Alex ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 101卷 / 02期

关键词：

Ferromagnetism - Ferromagnetic materials - Binary alloys - Chromium - Chromium alloys - Electrons - Energy gap;

D O I：

10.1103/PhysRevLett.101.027203

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Carrier-induced ferromagnetism in wide-gap transparent conductive oxides has been widely discussed and debated, leading to confusion and skepticism regarding whether dilute magnetic oxides exist at all. We show from density-functional calculations within a band-gap corrected approach that ferromagnetic Cr-Cr coupling can be switched on and off via electron doping in the wide-gap transparent n-type conductive oxide In2O3. We show that (i) Cr does not produce in In2O3 any free electrons and renders the system an insulating paramagnet. (ii) Extrinsic n-type doping of In2O3:Cr via Sn produces free electrons, whose concentration is controllable via the oxygen partial pressure. Such additional carriers stabilize a strong long-range Cr-Cr ferromagnetic coupling.

引用

收藏

页数：4

相关论文

共 30 条

[1] Intrinsic magnetic properties of In2O3 and transition metal-doped-In2O3 [J].

Berardan, David ;

Guilmeau, Emmanuel ;

Pelloquin, Denis .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2008, 320 (06) :983-989

[2] LSDA+U versus LSDA:: Towards a better description of the magnetic nearest-neighbor exchange coupling in Co- and Mn-doped ZnO -: art. no. 134418 [J].

Chanier, T ;

Sargolzaei, M ;

Opahle, I ;

Hayn, R ;

Koepernik, K .

PHYSICAL REVIEW B, 2006, 73 (13)

[3] Dilute magnetic oxides [J].

Coey, J. M. D. .

CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE, 2006, 10 (02) :83-92

[4] Donor impurity band exchange in dilute ferromagnetic oxides [J].

Coey, JMD ;

Venkatesan, M ;

Fitzgerald, CB .

NATURE MATERIALS, 2005, 4 (02) :173-179

[5] Origin of ferromagnetism in Zn1-xCoxO from magnetization and spin-dependent magnetoresistance measurements [J].

Dietl, T. ;

Andrearczyk, T. ;

Lipinska, A. ;

Kiecana, M. ;

Tay, Maureen ;

Wu, Yihong .

PHYSICAL REVIEW B, 2007, 76 (15)

[6] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F ;

Cibert, J ;

Ferrand, D .

SCIENCE, 2000, 287 (5455) :1019-1022

[7] Band structure of indium oxide: Indirect versus direct band gap [J].

Erhart, Paul ;

Klein, Andreas ;

Egdell, Russell G. ;

Albe, Karsten .

PHYSICAL REVIEW B, 2007, 75 (15)

[8] Room temperature ferromagnetism in transition metal (V, Cr, Ti) doped In2O3 [J].

Gupta, Amita ;

Cao, Hongtao ;

Parekh, Kinnari ;

Rao, K. V. ;

Raju, A. R. ;

Waghmare, Umesh V. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (09)

[9]

HARTNAGEL H., 1995, Semiconducting Transparent Thin Films

[10] Room temperature ferromagnetic n-type semiconductor in (In1-xFex)2O3-σ -: art. no. 052503 [J].

He, J ;

Xu, SF ;

Yoo, YK ;

Xue, QZ ;

Lee, HC ;

Cheng, SF ;

Xiang, XD ;

Dionne, GF ;

Takeuchi, I .

APPLIED PHYSICS LETTERS, 2005, 86 (05) :1-3