Gallic Acid as a Complexing Agent for Copper Chemical Mechanical Polishing Slurries at Neutral pH

被引：2
作者：
Kim, Yung Jun [1 ]
Kang, Min Cheol [2 ]
Kwon, Oh Joong [3 ]
Kim, Jae Jeong [1 ]
机构：
[1] Seoul Natl Univ, Sch Chem & Biol Engn, Seoul 151744, South Korea
[2] Hynix Semicond Inc, Adv Proc Res & Dev Div, Inchon 467701, South Korea
[3] Univ Incheon, Dept Energy & Chem Engn, Inchon 402749, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 05期
关键词：
HYDROGEN-PEROXIDE; PLANARIZATION; RADICALS; GLYCINE;
D O I：
10.1143/JJAP.50.056501
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Gallic acid was investigated as a new complexing agent for copper (Cu) chemical mechanical polishing slurries at neutral pH. Addition of 0.03 M gallic acid and 1.12M H2O2 at pH 7 resulted in a Cu removal rate of 560.73 +/- 17.49 nm/min, and the ratio of the Cu removal rate to the Cu dissolution rate was 14.8. Addition of gallic acid improved the slurry performance compared to glycine addition. X-ray photoelectron spectroscopy analysis and contact angle measurements showed that addition of gallic acid enhanced the Cu polishing behavior by suppressing the formation of surface Cu oxide. (C) 2011 The Japan Society of Applied Physics
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页数：4
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