A high voltage Dickson charge pump in SOICMOS

被引：24

作者：

Hoque, MR ^{[1
]}

McNutt, T ^{[1
]}

Zhang, J ^{[1
]}

Mantooth, A ^{[1
]}

Mojarradi, M ^{[1
]}

机构：

[1] Univ Arkansas, Bell Engn Ctr 3217, Fayetteville, AR 72701 USA

来源：

PROCEEDINGS OF THE IEEE 2003 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2003年

关键词：

D O I：

10.1109/CICC.2003.1249448

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An improved charge pump(dagger) that utilizes a MOSFET body diode as a charge transfer switch is discussed. The body diode is characterized and a body diode model is developed for simulating the charge pump circuit. An increase in voltage pumping gain for a silicon-on-insulator (SOI) Dickson charge pump is demonstrated when compared with a traditional bulk CMOS Dickson charge pump. A 6-stage Dickson charge pump was designed to produce a 20 V output from a 3.3 V supply, using a 4 MHz, two-phase non-overlapping clock signal driving the charge pump. The design was fabricated in a 0.35 mum partially depleted SOI CMOS process. An efficiency of 72% is achieved at a load current of approximately 20 muA.

引用

页码：493 / 496

页数：4

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