New physics-based analytic approach to the thin-oxide breakdown statistics

被引：233

作者：

Suñé, J ^{[1
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 06期

关键词：

CMOS reliability; dielectric breakdown; MOS devices; reliability modeling; ultrathin gate oxide;

D O I：

10.1109/55.924847

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new analytic cell-based approach to the modeling of the oxide breakdown statistics is presented. The nem model has the same predictive power as the standard percolation approach and the advantage of providing simple analytic results The scaling with oxide thickness of the Weibull slope and the mean critical density of defects at breakdown are accounted for correctly.

引用

页码：296 / 298

页数：3

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