New physics-based analytic approach to the thin-oxide breakdown statistics

被引：230
作者：
Suñé, J [1 ]
机构：
[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain
来源：
IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 06期
关键词：
CMOS reliability; dielectric breakdown; MOS devices; reliability modeling; ultrathin gate oxide;
D O I：
10.1109/55.924847
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new analytic cell-based approach to the modeling of the oxide breakdown statistics is presented. The nem model has the same predictive power as the standard percolation approach and the advantage of providing simple analytic results The scaling with oxide thickness of the Weibull slope and the mean critical density of defects at breakdown are accounted for correctly.
引用
收藏
页码：296 / 298
页数：3
相关论文
共 15 条
  • [1] Alam M. A., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P715, DOI 10.1109/IEDM.1999.824251
  • [2] The statistical distribution of percolation resistance as a probe into the mechanics of ultra-thin oxide breakdown
    Alam, MA
    Weir, BE
    Silverman, PJ
    Ma, Y
    Hwang, D
    [J]. INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, : 529 - 532
  • [3] Cell-based analytic statistical model with correlated parameters for intrinsic breakdown of ultrathin oxides
    Chen, MJ
    Huang, HT
    Chen, JH
    Su, CW
    Hou, CS
    Liang, MS
    [J]. IEEE ELECTRON DEVICE LETTERS, 1999, 20 (10) : 523 - 525
  • [4] Reliability: a possible showstopper for oxide thickness scaling?
    Degraeve, R
    Kaczer, B
    Groeseneken, G
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (05) : 436 - 444
  • [5] Degraeve R, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P863, DOI 10.1109/IEDM.1995.499353
  • [6] A MODEL RELATING WEAROUT TO BREAKDOWN IN THIN OXIDES
    DUMIN, DJ
    MADDUX, JR
    SCOTT, RS
    SUBRAMONIAM, R
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (09) : 1570 - 1580
  • [7] FARRES E, 1991, P 2 EUR S REL EL DEV, P285
  • [8] The influence of elevated temperature on degradation and lifetime prediction of thin silicon-dioxide films
    Kaczer, B
    Degraeve, R
    Pangon, N
    Groeseneken, G
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (07) : 1514 - 1521
  • [9] Degradation and hard breakdown transient of thin gate oxides in metal-SiO2-Si capacitors:: Dependence on oxide thickness
    Lombardo, S
    La Magna, A
    Spinella, C
    Gerardi, C
    Crupi, F
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) : 6382 - 6391
  • [10] CHARACTERIZATION OF SIO2 DIELECTRIC-BREAKDOWN FOR RELIABILITY SIMULATION
    NAFRIA, M
    SUNE, J
    AYMERICH, X
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (09) : 1662 - 1668
12