Photoluminescence thermal quenching behaviors of Er-doped SiOx (x < 2) prepared by ion implantation

被引：5
作者：
Zhang, CS [1 ]
Xao, HB
Wang, YJ
Cheng, ZJ
Cheng, XL
Zhang, F
机构：
[1] Yantai Univ, Dept Phys, Shandong 264005, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr Semicond Funct Film Engn Technol, Shanghai 200050, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 2005年 / 362卷 / 1-4期
基金：
中国国家自然科学基金;
关键词：
erbium; photoluminescence; silicon nanocrystal; thermal quenching;
D O I：
10.1016/j.physb.2005.02.013
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Erbium and silicon were implanted into thermally grown SiO2 film on Si (110) substrates, followed by thermal treatment at 700-1200 degrees C for 30 min. The microstructure was studied by using transmission electron microscope (TEM) and X-ray diffraction meter (XRD). Silicon nanocrystals (nc-Si), which enwrapped by amorphous silicon (a-Si), were observed when the implanted films annealed at T > 900 degrees C. The thermal quenching behavior at lambda = 1.53 5 mu m and its relation with anneal temperature were also investigated. With anneal temperature increasing, both the portion of a-Si and the intensity quenching decreased. Efficient luminescence from Er ions and weak intensity thermal quenching were obtained from the sample annealed at 1100 degrees C. The role of excessive a-Si in non-radiative processes at T > 150 K was discussed. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：208 / 213
页数：6
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