A new InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure

被引：8
作者：
Chen, Tzu-Pin [1 ]
Cheng, Shiou-Ying [2 ]
Hung, Ching-Wen [1 ]
Chu, Kuei-Yi [1 ]
Chen, Li-Yang [1 ]
Tsai, Tsung-Han [1 ]
Liu, Wen-Chau [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[2] Nation Ilan Univ, Dept Elect Engn, Ilan 26041, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 01期
关键词：
breakdown; electron blocking; potential spike; step-graded collector;
D O I：
10.1109/LED.2007.911286
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An interesting InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs layer at the base-collector (B-C) heterojunction is fabricated and studied. Simulated results reveal that the potential spike at the B-C heterointerface is completely eliminated. Experimentally, the operation regime is wider than 11 decades in magnitude of the collector current (I-C = 10(-12) A to I-C = 10(-1) A). Furthermore, the studied device exhibits a relatively high common-emitter breakdown voltage and low output conductance even at high temperature. In the microwave characteristics, the unity current gain cutoff frequency f(T) = 72.7 GHz and the maximum oscillation frequency f(max) = 50 GHz are achieved for a nonoptimized device (A(E) = 6 x 6 mu m(2)).
引用
收藏
页码：11 / 14
页数：4
相关论文
共 22 条
  • [1] dc characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)
    Chen, CY
    Cheng, SY
    Chiou, WH
    Chuang, HM
    Liu, RC
    Yen, CH
    Chen, JY
    Cheng, CC
    Liu, WC
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (04) : 874 - 879
  • [2] Freeway traffic stream modeling based on principal curves and its analysis
    Chen, DW
    Zhang, JP
    Tang, SM
    Wang, J
    [J]. IEEE TRANSACTIONS ON INTELLIGENT TRANSPORTATION SYSTEMS, 2004, 5 (04) : 246 - 258
  • [3] Temperature-dependent dc characteristics of an InGaAs/InGaAsP heterojunction bipolar transistor with an InGaAsP spacer and a composite-collector structure
    Chen, JY
    Chen, CY
    Lee, KM
    Yen, CH
    Tsai, SF
    Cheng, SY
    Liu, WC
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (06): : 2727 - 2733
  • [4] Cheng Hong-Jie, 2001, Chinese Journal of Biotechnology, V17, P7
  • [5] Wideband DHBTs using a graded carbon-doped InGaAS base
    Dahlström, M
    Fang, XM
    Lubyshev, D
    Urteaga, M
    Krishnan, S
    Parthasarathy, N
    Kim, YM
    Wu, Y
    Fastenau, JM
    Liu, WK
    Rodwell, MJW
    [J]. IEEE ELECTRON DEVICE LETTERS, 2003, 24 (07) : 433 - 435
  • [6] INGAAS INP COMPOSITE COLLECTOR HETEROSTRUCTURE BIPOLAR-TRANSISTORS
    FEYGENSON, A
    RITTER, D
    HAMM, RA
    SMITH, PR
    MONTGOMERY, RK
    YADVISH, RD
    TEMKIN, H
    PANISH, MB
    [J]. ELECTRONICS LETTERS, 1992, 28 (07) : 607 - 609
  • [7] Sub-300 nm InGaAs/InP Type-I DHBTs with a 150 nm collector, 30 nm base demonstrating 755 GHz fmax and 416 GHz fτ
    Griffith, Zach
    Lind, Erik
    Rodwell, Mark J. W.
    [J]. 2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2007, : 403 - 406
  • [8] 37-GHz bandwidth monolithically integrated InPHBT/evanescently coupled photodiode
    Huang, Wei-kuo
    Huang, Shou-chian
    Chung, Hsiao-wen
    Hsin, Yue-ming
    Shi, Jin-wei
    Kao, Yung-chung
    Kuo, Jerm-ming
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (9-12) : 1323 - 1325
  • [9] Over 300 GHz fT and fmax InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base
    Ida, M
    Kurishima, K
    Watanabe, N
    [J]. IEEE ELECTRON DEVICE LETTERS, 2002, 23 (12) : 694 - 696
  • [10] InP/InGaAs/InP Double Heterojunction Bipolar Transistors with 300 GHz Fmax
    Krishnan, S
    Dahlstrom, M
    Mathew, T
    Wei, Y
    Scott, D
    Urteaga, M
    Rodwell, MJW
    Liu, WK
    Lubyshev, D
    Fang, XM
    Wu, Y
    [J]. 2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2001, : 31 - 34
123