Electronic structure of stishovite

被引：11

作者：

Alvarez, JR ^{[1
]}

Rez, P ^{[1
]}

机构：

[1] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 108卷 / 01期

基金：

美国国家科学基金会;

关键词：

electronic band structure; electronic states (localized); electron energy loss spectroscopy;

D O I：

10.1016/S0038-1098(98)00299-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The band structure and the total density of states (DOS) have been calculated for stishovite using both an ab-initio pseudopotential code and the Linearized Augmented Plane Wave (LAPW) method. In particular, projected densities of states at both Si and O sites have been calculated for comparison with inner shell line structures. The low loss spectrum has been estimated. An appreciable amount of ionic behavior was found with oxygen taking charge away from silicon. Our results are in reasonable agreement with previous calculations. The electron energy-loss K and L-2,L-3 near edge structures were also calculated and compared with experimental measurements. (C) 1998 Published by Elsevier Science Ltd.

引用

页码：37 / 42

页数：6

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