Laser-induced damage study of bonded material for a high-brightness laser system

被引:2
作者
Kausas, Arvydas [1 ,2 ]
Taira, Takunori [1 ,2 ]
机构
[1] Inst Mol Sci, Div Res Innovat & Collaborat, 38 Nishigonaka, Okazaki, Aichi 4448585, Japan
[2] RIKEN SPring 8 Ctr, Laser Driven Electron Accelerat Technol Grp, 1-1-1 Kouto, Sayocho 6795148, Japan
关键词
MW PEAK POWER; ROOM-TEMPERATURE; CRYSTALLINE; PULSES; BULK;
D O I
10.1364/OL.456760
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this work we evaluated the laser-induced damage threshold of the interface between two identical YAG crystals, bonded by an inter-layer assisted surface activated bonding method. The experimental results indicate slight damage threshold degradation for both single- and polycrystalline trivalent rear-earth (RE3+)-ion-doped YAG gain media in the sub-nanosecond pulse regime. Moreover, crystal annealing prior to damage testing could provide additional improvement for the laser damage threshold of the bulk and bonded interface. (C) 2022 Optica Publishing Group
引用
收藏
页码:3067 / 3070
页数:4
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