Deposition and characterization of smooth ultra-nanocrystalline diamond film in CH4/H2/Ar by microwave plasma chemical vapor deposition

被引：28

作者：

Zou, Y. S. ^{[1
]}

Li, Z. X. ^{[1
]}

Wu, Y. F. ^{[1
]}

机构：

[1] Nanjing Univ Sci & Technol, Dept Mat Sci & Engn, Nanjing 210094, Peoples R China

来源：

VACUUM | 2010年 / 84卷 / 11期

关键词：

Ultra-nanocrystalline diamond film; Microwave plasma chemical vapor deposition; Grain size; Surface smoothness; THIN-FILMS; ULTRANANOCRYSTALLINE DIAMOND; NANOSTRUCTURED DIAMOND; ALUMINUM NITRIDE; GROWTH; CVD; MICROSTRUCTURE; DEVICES; LAYER; WEAR;

D O I：

10.1016/j.vacuum.2010.03.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The smooth ultra-nanocrystalline diamond (UNCD) films were prepared by microwave plasma chemical vapor deposition (MWCVD) using argon-rich CH4H2/Ar plasmas with varying argon concentration from 96% to 98% and negative bias voltage from 0 to 150 V. The influences of argon concentration and negative bias voltage on the microstructure, morphology and phase composition of the deposited UNCD films are investigated by using scanning electron microscopy (SEM), X-ray diffraction (XRD), atom force microscopy (AFM), and visible and UV Raman spectroscopy. It was found that the introduction of argon in the plasma caused the grain size and surface roughness decrease. The RMS surface roughness of 9.6 nm (10 micron square area) and grain size of about 5.7 nm of smooth UNCD films were achieved on Si(100) substrate. Detailed experimental results and mechanisms for UNCD film deposition in argon-based plasma are discussed. The deposited highly smooth UNCD film is also expected to be applicable in medical implants, surface acoustic wave (SAW) devices and micro-electromechanical systems (MEMS). (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：1347 / 1352

页数：6

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