3ω correction method for eliminating resistance measurement error due to Joule heating

被引：12

作者：

Guralnik, Benny ^{[1
,2
]}

Hansen, Ole ^{[2
]}

Henrichsen, Henrik H. ^{[1
]}

Beltran-Pitarch, Braulio ^{[2
]}

osterberg, Frederik W. ^{[1
]}

Shiv, Lior ^{[1
]}

Marangoni, Thomas A. ^{[2
]}

Stilling-Andersen, Andreas R. ^{[2
]}

Cagliani, Alberto ^{[1
]}

Hansen, Mikkel F. ^{[1
]}

Nielsen, Peter F. ^{[1
]}

Oprins, Herman ^{[3
]}

Vermeersch, Bjorn ^{[3
]}

Adelmann, Christoph ^{[3
]}

Dutta, Shibesh ^{[3
]}

Borup, Kasper A.

Mihiretie, Besira M. ^{[4
,5
]}

Petersen, Dirch H. ^{[2
]}

机构：

[1] CAPRES KLA Co, Diplomvej 373, DK-2800 Lyngby, Denmark

[2] Tech Univ Denmark, DK-2800 Lyngby, Denmark

[3] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[4] Aarhus Univ, Dept Chem, Langelandsgade 140, DK-8000 Aarhus C, Denmark

[5] Hot Disk AB, SE-41288 Gothenburg, Sweden

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2021年 / 92卷 / 09期

关键词：

MICRO 4-POINT PROBE; THERMAL-CONDUCTIVITY; RESISTIVITY MEASUREMENTS; TEMPERATURE-COEFFICIENT; SILICON; FILMS;

D O I：

10.1063/5.0063998

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Electrical four-terminal sensing at (sub-)micrometer scales enables the characterization of key electromagnetic properties within the semiconductor industry, including materials' resistivity, Hall mobility/carrier density, and magnetoresistance. However, as devices' critical dimensions continue to shrink, significant over/underestimation of properties due to a by-product Joule heating of the probed volume becomes increasingly common. Here, we demonstrate how self-heating effects can be quantified and compensated for via 3 omega signals to yield zero-current transfer resistance. Under further assumptions, these signals can be used to characterize selected thermal properties of the probed volume, such as the temperature coefficient of resistance and/or the Seebeck coefficient.

引用

页数：6

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