Mid-wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb superlattices

被引：30

作者：

Haddadi, A. ^{[1
]}

Adhikary, S. ^{[1
]}

Dehzangi, A. ^{[1
]}

Razeghi, M. ^{[1
]}

机构：

[1] Northwestern Univ, Ctr Quantum Devices, Dept Elect Engn & Comp Sci, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 02期

关键词：

MU-M; GAIN;

D O I：

10.1063/1.4958715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A mid-wavelength infrared heterojunction phototransistor based on type-II InAs/AlSb/GaSb superlattices on GaSb substrate has been demonstrated. Near a wavelength of 4 mu m saturated optical gains of 668 and 639 at 77 and 150K, respectively, are demonstrated over a wide dynamic range. At 150 K, the unity optical gain collector dark current density and DC current gain are 1 x 10(-3) A/cm(2) and 3710, respectively. This demonstrates the potential for use in high-speed applications. In addition, the phototransistor exhibits a specific detectivity value that is four times higher compared with a state-of-the-art type-II superlattice-based photodiode with a similar cut-off wavelength at 150K. Published by AIP Publishing.

引用

页数：4

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