p- and n-type carbon doping of InxGa1-xAsyP1-y alloys lattice matched to InP

The carbon doping of InxGa1-xAsyP1-y alloys grown by chemical beam epitaxy was studied in the whole range of compositions lattice matched to InP, using carbon-tetrabromide as a source of carbon. The conductivity changed from p- to n-type when going from In0.53Ga0.47As to InP, with a transition point at a composition corresponding to a wavelength of 1.35 mu m. The carbon doped n-type quaternaries were found to be very compensated even for compositions close to InP. The p-type quaternaries showed little compensation near the transition point, and almost no compensation for compositions close to In0.53Ga0.47As. Reducing the V/III ratio, while keeping all other growth parameters unchanged, increased the incorporation of the carbon atom, and reduced the compensation for p-type quaternaries. The inversion point position did not change appreciably when the quaternaries were grown with a halved V/III ratio. (C) 1996 American Institute of Physics.