Permanent bending and alignment of ZnO nanowires

被引：62

作者：

Borschel, Christian ^{[1
]}

Spindler, Susann ^{[1
]}

Lerose, Damiana ^{[2
,3
]}

Bochmann, Arne ^{[3
]}

Christiansen, Silke H. ^{[3
,4
]}

Nietzsche, Sandor ^{[5
]}

Oertel, Michael ^{[1
]}

Ronning, Carsten ^{[1
]}

机构：

[1] Univ Jena, Inst Solid State Phys, D-07743 Jena, Germany

[2] Max Planck Inst Microstruct Phys, D-06120 Halle, Saale, Germany

[3] Inst Photon Technol, D-07745 Jena, Germany

[4] Max Planck Inst Sci Light, D-91058 Erlangen, Germany

[5] Univ Jena, Ctr Electron Microscopy, D-07743 Jena, Germany

来源：

NANOTECHNOLOGY | 2011年 / 22卷 / 18期

关键词：

FOCUSED ION-BEAM; SEMICONDUCTOR NANOWIRES; NANOSTRUCTURES; GROWTH; DAMAGE;

D O I：

10.1088/0957-4484/22/18/185307

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ion beams can be used to permanently bend and re-align nanowires after growth. We have irradiated ZnO nanowires with energetic ions, achieving bending and alignment in different directions. Not only the bending of single nanowires is studied in detail, but also the simultaneous alignment of large ensembles of ZnO nanowires. Computer simulations reveal how the bending is initiated by ion beam induced damage. Detailed structural characterization identifies dislocations to relax stresses and make the bending and alignment permanent, even surviving annealing procedures.

引用

页数：9

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