Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness

被引：155

作者：

Li, Y.-L. ^{[1
]}

Huang, R. ^{[1
]}

Lai, Y.-H. ^{[1
]}

机构：

[1] Natl Taiwan Univ, Inst Photon & Optoelect, Taipei 10617, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 18期

关键词：

D O I：

10.1063/1.2805197

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes with varied InGaN quantum well thicknesses are fabricated and characterized. The investigation of luminous efficiency versus current density reveals a variety of efficiency droop behaviors. It is found that the efficiency droop can be drastically reduced by increasing the quantum well thickness of the MQW structures. On the other hand, relative internal quantum efficiency (IQE) measurements indicate that a thinner well results to higher IQEs owing to the greater spatial overlap of electron and hole distribution functions. (C) 2007 American Institute of Physics.

引用

页数：3

共 13 条

[1] Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures [J].

Bai, J ;

Wang, T ;

Sakai, S .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (08) :4729-4733

[2] Fully-screened polarization-induced electric fields in blue/violet InGaN/GaN light-emitting devices grown on bulk GaN [J].

Franssen, G ;

Suski, T ;

Perlin, P ;

Bohdan, R ;

Bercha, A ;

Trzeciakowski, W ;

Makarowa, I ;

Prystawko, P ;

Leszczynski, M ;

Grzegory, I ;

Porowski, S ;

Kokenyesi, S .

APPLIED PHYSICS LETTERS, 2005, 87 (04)

[3]

Hangleiter A, 1998, MRS INTERNET J N S R, V3

[4] GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer [J].

Kim, JK ;

Gessmann, T ;

Schubert, EF ;

Xi, JQ ;

Luo, H ;

Cho, J ;

Sone, C ;

Park, Y .

APPLIED PHYSICS LETTERS, 2006, 88 (01)

[5] Improved electroluminescence on nonpolar m-plane InGaN/GaN quantum wells LEDs [J].

Kim, Kwang-Choong ;

Schmidt, Mathew C. ;

Sato, Hitoshi ;

Wu, Feng ;

Fellows, Natalie ;

Saito, Makoto ;

Fujito, Kenji ;

Speck, James S. ;

Nakamura, Shuji ;

DenBaars, Steven P. .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2007, 1 (03) :125-127

[6] Status and future of high-power light-emitting diodes for solid-state lighting [J].

Krames, Michael R. ;

Shchekin, Oleg B. ;

Mueller-Mach, Regina ;

Mueller, Gerd O. ;

Zhou, Ling ;

Harbers, Gerard ;

Craford, M. George .

JOURNAL OF DISPLAY TECHNOLOGY, 2007, 3 (02) :160-175

[7] Low-resistance ohmic contacts to p-type GaN [J].

Li, YL ;

Schubert, EF ;

Graff, JW ;

Osinsky, A ;

Schaff, WF .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2728-2730

[8] InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts [J].

Lin, YC ;

Chang, SJ ;

Su, YK ;

Tsai, TY ;

Chang, CS ;

Shei, SC ;

Kuo, CW ;

Chen, SC .

SOLID-STATE ELECTRONICS, 2003, 47 (05) :849-853

[9] Recent progress of nitride-based light emitting devices [J].

Mukai, T ;

Nagahama, S ;

Sano, M ;

Yanamoto, T ;

Morita, D ;

Mitani, T ;

Narukawa, Y ;

Yamamoto, S ;

Niki, I ;

Yamada, M ;

Sonobe, S ;

Shioji, S ;

Deguchi, K ;

Naitou, T ;

Tamaki, H ;

Murazaki, Y ;

Kameshima, M .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 200 (01) :52-57

[10] Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes [J].

Mukai, T ;

Yamada, M ;

Nakamura, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (7A) :3976-3981

← 1 2 →