Highly Reflective p-Contacts Made of Pd-Al on Deep Ultraviolet Light-Emitting Diodes

被引：20

作者：

Cho, Hyun Kyong ^{[1
]}

Ostermay, Ina ^{[1
]}

Zeimer, Ute ^{[1
]}

Enslin, Johannes ^{[2
]}

Wernicke, Tim ^{[2
]}

Einfeldt, Sven ^{[1
]}

Weyers, Markus ^{[1
]}

Kneissl, Michael ^{[1
,2
]}

机构：

[1] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, D-12489 Berlin, Germany

[2] Tech Univ Berlin, Inst Solid State Phys, D-10623 Berlin, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2017年 / 29卷 / 24期

关键词：

Deep UV; light emitting diodes (LEDs); AlGaN; reflective ohmic contact; OPTICAL-CONSTANTS;

D O I：

10.1109/LPT.2017.2771526

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Highly reflective metal contacts for the p-layers of AlGaN-based deep ultraviolet light emitting diodes (DUV LEDs) emitting at 305 nm have been investigated. Different Pd-Al metal stacks have been examined and a reflectivity of 82% was obtained after annealing, which is about two times the value measured for conventional Pd contacts. The high reflectivity is attributed to the formation of an Al4Pd phase besides an Al phase in the annealed contact. DUV LEDs with highly-reflective Pd-Al contacts exhibited an increase of the light output power by 30% at a dc current of 20 mA.

引用

页码：2222 / 2225

页数：4

共 17 条

[1] Effect of Annealing on the Characteristics of Pd/Au Contacts to p-Type GaN/Al0.45Ga0.55N [J].

Bai, Y. ;

Liu, J. ;

Shen, H. J. ;

Ma, P. ;

Liu, X. Y. ;

Guo, L. W. .

JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (11) :3021-3026

[2] Curing of composite components by ultraviolet radiation: A review [J].

Endruweit, A ;

Johnson, MS ;

Long, AC .

POLYMER COMPOSITES, 2006, 27 (02) :119-128

[3]

Hwang S., 2011, APPL PHYS EXP, V4

[4] Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes [J].

Inazu, Tetsuhiko ;

Fukahori, Shinya ;

Pernot, Cyril ;

Kim, Myung Hee ;

Fujita, Takehiko ;

Nagasawa, Yosuke ;

Hirano, Akira ;

Ippommatsu, Masamichi ;

Iwaya, Motoaki ;

Takeuchi, Tetsuya ;

Kamiyama, Satoshi ;

Yamaguchi, Masahito ;

Honda, Yoshio ;

Amano, Hiroshi ;

Akasaki, Isamu .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (12)

[5] Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN [J].

Jang, JS ;

Chang, IS ;

Kim, HK ;

Seong, TY ;

Lee, SH ;

Park, SJ .

APPLIED PHYSICS LETTERS, 1999, 74 (01) :70-72

[6] OPTICAL-CONSTANTS OF TRANSITION-METALS - TI, V, CR, MN, FE, CO, NI, AND PD [J].

JOHNSON, PB ;

CHRISTY, RW .

PHYSICAL REVIEW B, 1974, 9 (12) :5056-5070

[7] AlGaN multiple quantum well based deep UV LEDs and their applications [J].

Khan, M. Asif .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (07) :1764-1770

[8]

Kim CC, 2000, ELECTROCHEM SOLID ST, V3, P335

[9]

Kneissl M, 2016, SPRINGER SER MATER S, V227, P1, DOI 10.1007/978-3-319-24100-5

[10] THERMAL-REACTIONS BETWEEN ALUMINUM AND PALLADIUM LAYERED FILMS [J].

KOSTER, U ;

HO, PS ;

RON, M .

THIN SOLID FILMS, 1980, 67 (01) :35-44

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