Electronic structure calculations for semiconductors under pressure

被引：25
|
作者：
Christensen, NE [1 ]
机构：
[1] Univ Aarhus, Inst Phys & Astron, DK-8000 Aarhus, Denmark
来源：
HIGH PRESSURE IN SEMICONDUCTOR PHYSICS I | 1998年 / 54卷
关键词：
D O I：
10.1016/S0080-8784(08)60230-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：49 / 144
页数：96
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