Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors

被引:95
作者
Ma, Nan [1 ]
Jena, Debdeep [1 ]
机构
[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA
基金
美国国家科学基金会;
关键词
transition metal dichalcogenide (TMD); field-effect transistor (FET); quantum capacitance; field-effect mobility; METAL CONTACTS; MONOLAYER; TRANSITION;
D O I
10.1088/2053-1583/2/1/015003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, the consequence of the high band-edge density of states on the carrier statistics and quantum capacitance in transition metal dichalcogenide two-dimensional semiconductor devices is explored. The study questions the validity of commonly used expressions for extracting carrier densities and field-effect mobilities from the transfer characteristics of transistors with such channel materials. By comparison to experimental data, a new method for the accurate extraction of carrier densities and mobilities is outlined. The work thus highlights a fundamental difference between these materials and traditional semiconductors that must be considered in future experimental measurements.
引用
收藏
页数:8
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