Effects of hydrostatic pressure on intrawell and interwell excitons in a strained GaAs/GaAlAs double quantum well system

被引：7
作者：
Angayarkanni, N. [2 ]
Peter, A. John [1 ]
Lee, Chang Woo [3 ,4 ]
机构：
[1] Govt Arts & Sci Coll, Dept Phys, Madurai 625106, Tamil Nadu, India
[2] Govt Arts & Sci Coll, Dept Phys, Karaikkudi 630002, Tamil Nadu, India
[3] Kyung Hee Univ, Coll Engn, Dept Chem Engn, Yongin 446701, Gyeonggi, South Korea
[4] Kyung Hee Univ, Coll Engn, Green Energy Ctr, Yongin 446701, Gyeonggi, South Korea
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2011年 / 44卷 / 03期
关键词：
PHOTOIONIZATION CROSS-SECTION; SHALLOW-DONOR IMPURITY; OPTICAL-ABSORPTION; BINDING-ENERGIES; STATES; TEMPERATURE;
D O I：
10.1016/j.physe.2011.10.009
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Binding energies of intrawell and interwell excitons are investigated in a GaAs/GaAlAs double quantum well system in the presence of hydrostatic pressure applied in the z-direction. Calculations have been carried out with the variational technique within the single band effective mass approximations using a two parametric trial wave function. The interband emission energy as a function of well width is calculated in the influence of pressure. The pressure dependent photoionization cross section for a charged exciton placed at the center of the quantum well is computed as a function of normalized photon energy. The dependence of the photoionization cross section on photon energy is carried out for the charged excitons. The resulting spectra are brought out for light polarized along and perpendicular to the growth direction. The results show that the charged exciton binding energy, interband emission energy and the photoionization cross section depend strongly on the well width and the hydrostatic pressure. Our results are compared with the other existing literature available. (C) 2011 Elsevier B.V. All rights reserved.
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页码：590 / 596
页数：7
相关论文
共 33 条
[1]   Hydrostatic pressure, electric and magnetic field effects on shallow donor impurity states and photoionization cross section in cylindrical GaAs-Ga1-xAlxAs quantum dots [J].
Barseghyan, M. G. ;
Kirakosyan, A. A. ;
Duque, C. A. .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2009, 246 (03) :626-629
[2]  
Bir G. L., 1974, SYMMETRY STRAIN INDU
[3]   Terahertz spectroscopy of explosives and drugs [J].
Davies, A. Giles ;
Burnett, Andrew D. ;
Fan, Wenhui ;
Linfield, Edmund H. ;
Cunningham, John E. .
MATERIALS TODAY, 2008, 11 (03) :18-26
[4]   EFFECT OF THE GAMMA-CHI CROSSOVER ON THE BINDING-ENERGIES OF CONFINED DONORS IN SINGLE GAAS/ALXGA1-XAS QUANTUM-WELL MICROSTRUCTURES [J].
ELABSY, AM .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1994, 6 (46) :10025-10030
[5]   PHOTOIONIZATION OF IMPURITIES IN QUANTUM-WELLS [J].
ELSAID, M ;
TOMAK, M .
SOLID STATE COMMUNICATIONS, 1992, 82 (09) :721-723
[6]   UNIAXIAL-STRESS INVESTIGATION OF ASYMMETRICAL GAAS-(GA,AL)AS DOUBLE QUANTUM-WELLS [J].
GIL, B ;
LEFEBVRE, P ;
BONNEL, P ;
MATHIEU, H ;
DEPARIS, C ;
MASSIES, J ;
NEU, G ;
CHEN, Y .
PHYSICAL REVIEW B, 1993, 47 (04) :1954-1960
[7]   Photoluminescence of short-period GaAs/AlAs superlattices: A hydrostatic pressure and temperature study [J].
Guha, S ;
Cai, Q ;
Chandrasekhar, M ;
Chandrasekhar, HR ;
Kim, H ;
Alvarenga, AD ;
Vogelgesang, R ;
Ramdas, AK ;
Melloch, MR .
PHYSICAL REVIEW B, 1998, 58 (11) :7222-7229
[8]   Binding energy of excitons in symmetric and asymmetric coupled double quantum wells in a uniform magnetic field [J].
Kasapoglu, E ;
Sari, H ;
Balkan, N ;
Sokmen, I ;
Ergun, Y .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (02) :219-224
[9]   The hydrostatic pressure and temperature effects on donor impurities in GaAs/Ga1-xAlxAs double quantum well under the external fields [J].
Kasapoglu, E. .
PHYSICS LETTERS A, 2008, 373 (01) :140-143
[10]   Spin-filter device based on the Rashba effect using a nonmagnetic resonant tunneling diode [J].
Koga, T ;
Nitta, J ;
Takayanagi, H .
PHYSICAL REVIEW LETTERS, 2002, 88 (12) :4-126601
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