Microscopic mechanisms of self-compensation in Si δ-doped GaAs -: art. no. 086104

被引：18

作者：

Modesti, S

Duca, R

Finetti, P

Ceballos, G

Piccin, M

Rubini, S

Franciosi, A

机构：

[1] INFM, Lab Nazl TASC, I-34012 Trieste, Italy

[2] Univ Trieste, Dipartmento Fis, I-34127 Trieste, Italy

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 92卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.92.086104

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We combined systematic cross-sectional scanning tunneling microscopy and spectroscopy investigations with Hall measurements on single Si delta-doped layers, as well as Si delta-doped superlattices in GaAs. We found that Si self-compensation involves nucleation and growth of electrically neutral Si precipitates at the expense of the conventional donor Si phase.

引用

页数：4

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