The study of oxygen ion motion in Zn2GeO4 by Raman spectroscopy

被引：42

作者：

Zhao, Yuxin ^{[1
]}

Yang, Shuwen ^{[1
]}

Zhu, Jun ^{[1
]}

Ji, Guangfu ^{[2
]}

Peng, Fang ^{[1
]}

机构：

[1] Sichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R China

[2] China Acad Engn Phys, Inst Fluid Phys, Lab Shock Wave & Detonat Phys Res, Mianyang 621900, Peoples R China

来源：

SOLID STATE IONICS | 2015年 / 274卷

基金：

中国国家自然科学基金;

关键词：

Oxygen ion motion; Temperature dependence; Raman spectroscopy; Oxygen related bandwidth; PSEUDOPOTENTIALS; CONDUCTIVITY; LUMINESCENCE; MODES;

D O I：

10.1016/j.ssi.2015.02.015

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The temperature dependence of oxygen ion behavior in Zn2GeO4 has been studied from 78 to 873 K. As the temperature increases, the oxygen ions undergo positional disordering along the oxygen vacancies, with the oxygen related modes (ORMs) at 751 cm(-1) and 775 cm(-1) broadening and weakening dramatically. The temperature dependence of the bandwidth of oxygen ion mode is particularly interesting and a model suggested by Andrade and Porto is used to describe the linewidth of a phonon. The activation energy calculated from the ORM is 0.46 eV. Moreover, the motion of oxygen ion in Zn2GeO4 is described in terms of the conventional fast-ion conductor. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：12 / 16

页数：5

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