Design and evaluation of a memristor-based look-up table for non-volatile field programmable gate arrays

被引:32
作者
Almurib, Haider Abbas F. [1 ]
Kumar, Thulasiraman Nandha [1 ]
Lombardi, Fabrizio [2 ]
机构
[1] Univ Nottingham Malaysia Campus, Fac Engn, Semenyih, Selangor, Malaysia
[2] Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA
关键词
field programmable gate arrays; memristors; table lookup; MOSFET; sequential circuits; nonvolatile field programmable gate arrays; FPGA; memristor-based look-up table; storage elements; n-type metal-oxide-semiconductor transistors; WRITE operations; READ operations; word lines; bit lines; RESTORE pulse; READ; 0; operation; circuit-level evaluation; sequential benchmarks; Spartan; 4; nonvolatile LUT;
D O I
10.1049/iet-cds.2015.0217
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study presents the detailed design and analysis of a new memristor-based look-up table (LUT) for field programmable gate arrays (FPGAs). The proposed memory utilises memristors as storage elements with N-type metal-oxide-semiconductor transistors for row access. New WRITE and READ operations are proposed; the proposed LUT requires no additional circuit to handle the WRITE 1 (0) operation. The proposed method requires a RESTORE pulse only for the READ 0 operation. Moreover, the WRITE operation of the proposed method requires three power lines and a RESTORE pulse only for the READ 0 operation, thus saving 25% READ time when compared with previous methods. In addition, the proposed method does not require the REFRESH pulse and does not dissipate power during stand-by mode. Extensive simulation results are presented with respect to different operational features such as normalised state parameter, pulse width and LUT size. In addition to a circuit-level evaluation, the proposed LUT scheme has also been assessed with respect to FPGA implementation. Simulation results using sequential benchmarks mapped on Spartan 4 and 5 FPGAs show that the proposed non-volatile LUT outperforms existing static random access memory cell-based LUTs in terms of performance.
引用
收藏
页码:292 / 300
页数:9
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