Controlling of electronic parameters of GaAs Schottky diode by poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol) organic interlayer

被引：17

作者：

Aydin, Mehmet Enver ^{[2
]}

Soylu, Murat ^{[3
]}

Yakuphanoglu, Fahrettin ^{[1
,3
]}

Farooq, W. A. ^{[4
]}

机构：

[1] Firat Univ, Dept Met & Mat Engn, TR-23169 Elazig, Turkey

[2] Dicle Univ, Fac Sci & Arts, Dept Phys, Diyarbakir, Turkey

[3] Bingol Univ, Fac Sci & Arts, Dept Phys, Bingol, Turkey

[4] King Saud Univ, Coll Sci, Dept Phys, Riyadh 11451, Saudi Arabia

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 06期

关键词：

Organic semiconductor/inorganic; semiconductor contacts; Hetero-junction; Schottky barrier diodes; INTERFACE STATE DENSITY; BARRIER HEIGHT; ELECTRICAL CHARACTERIZATION; SI; METAL; CONTACT; PHTHALOCYANINE; SURFACES;

D O I：

10.1016/j.mee.2010.11.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electronic properties of metal-organic semiconductor-inorganic semiconductor structure between GaAs and poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol) organic film have been investigated via current-voltage and capacitance-voltage methods. The Au/PEDOT/n-GaAs contact exhibits a rectification behavior with the barrier height of 0.69 eV and ideality factor value of 3.94. The barrier height of the studied diode (0.67 eV) is lower than that of Ni/n-GaAs/In (0.85 eV) and Au/n-GaAs/In Schottky diodes. The decrease in barrier height of Au/n-GaAs/In Schottky diode is likely to be due to the variation in the space charge region in the GaAs. The obtained results indicate that control of the interfacial potential barrier for metal/n-GaAs diode was achieved using thin interlayer of the poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol). (c) 2010 Elsevier B.V. All rights reserved.

引用

页码：867 / 871

页数：5

共 40 条

[31]

Maas S., 1986, Microwave mixers

[32] Full characterization of the interface between the organic semiconductor copper phthalocyanine and gold [J].

Peisert, H ;

Knupfer, M ;

Schwieger, T ;

Auerhammer, JM ;

Golden, MS ;

Fink, J .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (08) :4872-4878

[33]

SEKI K, 2001, THIN SOLID FILMS, V298, P31

[34] Heterojunction diodes of soluble conducting polypyrrole with porous silicon [J].

Shen, YQ ;

Wan, MX .

SYNTHETIC METALS, 1998, 98 (02) :147-152

[35] GaN based transistors for high power applications [J].

Shur, MS .

SOLID-STATE ELECTRONICS, 1998, 42 (12) :2131-2138

[36] High-barrier height Sn/p-Si Schottky diodes with interfacial layer by anodization process [J].

Temircl, C ;

Bati, B ;

Saglam, M ;

Türüt, A .

APPLIED SURFACE SCIENCE, 2001, 172 (1-2) :1-7

[37] SEMICONDUCTIVE POLYMER-BASED SCHOTTKY DIODE [J].

TURUT, A ;

KOLELI, F .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (02) :818-819

[38] Growth and morphology of SnPc films on the S-GaAs(001) surface: a combined XPS, AFM and NEXAFS study [J].

Vearey-Roberts, AR ;

Steiner, HJ ;

Evans, S ;

Cerrillo, I ;

Mendez, J ;

Cabailh, G ;

O'Brien, S ;

Wells, JW ;

McGovern, IT ;

Evans, DA .

APPLIED SURFACE SCIENCE, 2004, 234 (1-4) :131-137

[39] BARRIER INHOMOGENEITIES AT SCHOTTKY CONTACTS [J].

WERNER, JH ;

GUTTLER, HH .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (03) :1522-1533

[40] Electrical characterization of the polyaniline including boron/p-type silicon structure for optical sensor applications [J].

Yakuphanoglu, Fahrettin ;

Senkal, B. Filiz .

SYNTHETIC METALS, 2008, 158 (21-24) :821-825

← 1 2 3 4 →