Effect of low-temperature diffusion annealing on the properties of PbSnTeIn epilayers

被引：5

作者：

Vasil'eva, LF ^{[1
]}

Klimov, AE ^{[1
]}

Petikov, NI ^{[1
]}

Shumskii, VN ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia

来源：

INORGANIC MATERIALS | 2001年 / 37卷 / 02期

关键词：

Hydrogen; Atmosphere; Indium; Inorganic Chemistry; Transport Property;

D O I：

10.1023/A:1004105510160

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A procedure was proposed for low-temperature vapor-phase In doping of Pb1-xSnxTe films grown by molecular-beam epitaxy on BaF2 substrates. Diffusion annealing was call icd out in a hydrogen atmosphere in the presence of a vapor source identical in composition to the film and a dopant source at temperatures which were, in most cases, no higher than the growth temperature (300-460 degreesC). The effect of diffusion annealing on the composition, transport properties, and homogeneity of both undoped and In doped films was examined. The results suggest that indium is transported in the vapor phase in the form of indium tellurides resulting from the reaction between Te vapor and liquid In.

引用

页码：144 / 148

页数：5

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