Single Event Effects Hardening on 65 nm Flash-Based Field Programmable Gate Array

被引:0
作者
Wang, Jih-Jong [1 ]
Dsilva, Durwyn [1 ,2 ]
Rezzak, Nadia [1 ]
Cui, Sean [1 ,3 ]
Varela, Stephen [1 ]
Chen, Harvey [1 ]
Nguyen, Minh [1 ]
O'Neill, Ken [1 ]
Hawley, Frank [1 ]
McCollum, John [1 ]
Hamdy, Esmat [1 ]
机构
[1] Microsemi SoC, San Jose, CA 95134 USA
[2] Susquehanna Int Grp, Bala Cynwyd, PA 19004 USA
[3] Univ Toronto, Toronto, ON, Canada
来源
2016 16TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2016年
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
the single event effects hardening and heavy-ion testing of a radiation-hardened Flash-based field programmable gate array, RTG4, are presented. The hardened logic circuits include fabric flip-flops, fabric SRAM, global clocks, PLL, and SERDES. SEL is hardened for the whole chip. Lastly, the inspace programming is hardened as the consequence of the above hardening activities. Test results show the effects of hardenings.
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页数:5
相关论文
共 3 条
  • [1] Dsilva D., NSREC 2016 DAT WORKS
  • [2] Rezzak N., 2015 NSREC DAT WORKS
  • [3] A Novel 65 nm Radiation Tolerant Flash Configuration Cell Used in RTG4 Field Programmable Gate Array
    Wang, Jih-Jong
    Rezzak, Nadia
    Dsilva, Durwyn
    Jia, James
    Cai, Alex
    Hawley, Frank
    McCollum, John
    Hamdy, Esmat
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (06) : 3072 - 3079