Development of 90nm InGaAs HEMTs and Benchmarking Logic Performance with Si CMOS

被引：0

作者：

Cheng, Kuang-Yu ^{[1
]}

Chan, Doris ^{[1
]}

Tan, Fei ^{[1
]}

Xu, Huiming ^{[1
]}

Feng, Milton ^{[1
]}

Ko, Chih-Hsin ^{[2
]}

Wann, Clement ^{[2
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, 208 N Wright St, Urbana, IL 61801 USA

[2] TSMC, Exploratory Technol Dev Dept, Hsinchu, Taiwan

来源：

2010 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS) | 2010年

关键词：

HEMTs; CMOS; Microwave measurements; Device modeling; TRANSISTOR; SUBSTRATE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed 90nm In0.7Ga0.3As channel HEMTs, directly measured of DC and RF characteristics, and performed microwave modeling for both 90nm Si CMOS and HEMT for benchmarking logic performance for future design layout and process improvement.

引用

页数：4

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