Investigation of degradation mechanisms in small scaled amorphous-indium-gallium-zinc-oxide thin-film-transistors

We measured the stability of small-sized trench devices with different specifications under negative bias. The degradation behavior of the electrical characteristics of the device caused by the channel size was analyzed. It was found that the passivation caused by the increase of the channel width was not completely generated by charge trapping in the passivation layer and the interface between the passivation layer and the active layer. The parasitic effect related to the channel length and the drain-induced barrier lowering effect together affect the electrical stability of the device. This shows that with the development of small-sized TFT devices, the influence of size on the device begins to appear. As such the size factor must be considered when designing the device. For the instability caused by these devices themselves, post-processing can be used to improve the stability.