Ultrathin Ta2O5 film capacitor with Ru bottom electrode

被引：39

作者：

Aoyama, T ^{[1
]}

Yamazaki, S ^{[1
]}

Imai, K ^{[1
]}

机构：

[1] Toshiba Corp, Microelect Engn Lab, USLI Proc Engn Lab, Yokohama, Kanagawa 2358522, Japan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1998年 / 145卷 / 08期

关键词：

D O I：

10.1149/1.1838745

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The characteristics of the ultrathin Ta2O5 film capacitors with Ru bottom electrodes have been investigated. Ru films are deposited on n(+)-Si by sputtering in 10% O-2/Ar ambient, for the bottom electrode, and Ta2O5 films are deposited by chemical vapor deposition using Ta(OC2H5)(5) and O-2. By O-2 plasma treatment at 400 degrees C after N-2 thermal treatment at 700 degrees C, excellent properties, are obtained such that the effective SiO2 film thickness is 0.68 nm for 6 nm thick Ta2O5 film and the leakage current is less than 1 x 10(-8) A/cm(2) between the range of -2.1 and +1.8 V. The Ta2O5 film with a Ru bottom electrode is one of the most suitable structures for Gbit dynamic random access memory capacitors.

引用

页码：2961 / 2964

页数：4

共 21 条

[1] Leakage current mechanism of amorphous and polycrystalline Ta2O5 films grown by chemical vapor deposition [J].

Aoyama, T ;

Saida, S ;

Okayama, Y ;

Fujisaki, M ;

Imai, K ;

Arikado, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (03) :977-983

[2] Interfacial layers between Si and Ru films deposited by sputtering in Ar/O2 mixture ambient [J].

Aoyama, T ;

Murakoshi, A ;

Koike, M ;

Takeno, S ;

Imai, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (2B) :L242-L244

[3] EFFECT OF OZONE ANNEALING ON THE DIELECTRIC-PROPERTIES OF TANTALUM OXIDE THIN-FILMS GROWN BY CHEMICAL VAPOR-DEPOSITION [J].

ISOBE, C ;

SAITOH, M .

APPLIED PHYSICS LETTERS, 1990, 56 (10) :907-909

[4]

KAGA T, 1994, INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST, P927, DOI 10.1109/IEDM.1994.383261

[5]

Kamiyama S., 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P49, DOI 10.1109/IEDM.1993.347401

[6] ULTRATHIN TANTALUM OXIDE CAPACITOR PROCESS USING OXYGEN-PLASMA ANNEALING [J].

KAMIYAMA, S ;

SUZUKI, H ;

WATANABE, H ;

SAKAI, A ;

KIMURA, H ;

MIZUKI, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (05) :1246-1251

[7] CHEMICAL VAPOR-DEPOSITION OF TANTALUM PENTOXIDE FILMS FOR METAL-INSULATOR-SEMICONDUCTOR DEVICES [J].

KAPLAN, E ;

BALOG, M ;

FROHMANBENTCHKOWSKY, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (10) :1570-1573

[8] Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate [J].

Lau, WS ;

Khaw, KK ;

Qian, PW ;

Sandler, NP ;

Chu, PK .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (11) :8841-8843

[9] A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O-2 or N2O by zero-bias thermally stimulated current spectroscopy [J].

Lau, WS ;

Khaw, KK ;

Qian, PW ;

Sandler, NP ;

Chu, PK .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (5A) :2599-2604

[10] A Gbit-scale DRAM stacked capacitor with ECR MOCVD SrTiO3 over rie patterned RuO2/TiN storage nodes [J].

Lesaicherre, PY ;

Yamamichi, S ;

Takemura, K ;

Yamaguchi, H ;

Tokashiki, K ;

Miyasaka, Y ;

Yoshida, M ;

Ono, H .

INTEGRATED FERROELECTRICS, 1995, 11 (1-4) :81-100

← 1 2 3 →