Synthesis and luminescent properties of Mg2+ doped Zn2SiO4:Mn2+ phosphor under VUV excitation

A series of phosphors of Zn1.92-xMgxSiO4:0.08Mn (0 <= x <= 0.12) were successfully synthesized at various heating atmosphere via sot-gel method. The structure and luminescent properties of the samples were characterized by X-ray diffractometer (XRD) and the FLS920T Spectrophotometer, respectively. The results indicated that in the Zn1.92SiO4: 0.08Mn system, the Me2+ doped could substitute for the Zn2+ site and result in the decrease of lattice parameters. The absorption band of the MgO4 cluster was located at about 154 nm in vacuum ultraviolet region. Mg2+ ion doping has favorable influence on the photoluminescence properties of Zn2SiO4:Mn2+, the optimum concentration of Mg2+ being 0.06 mol under 147 nm excitation. The emission intensity of Zn1.92-xMgxSiO4:0.08Mn(2+) phosphors calcined in the mixture of nitrogen and hydrogen were stronger than those of the phosphors calcined in other heating atmospheres, and the emission intensity of Zn1.86Mg0.06SiO4 : 0.08Mn(2+) calcined in the mixture of N-2 and H-2 was 113% of that of Zn1.92SiO4:0.08Mn(2+), being 5% higher than that of commercial phosphor. After Mg2+ doping the decay time of phosphor was much shortened and the decay time of Zn1.86Mg0.06SiO4:0.08Mn(2+) was 3.89 ms, which was shorter by 1.33 ms than that of commercial product.