QUBiC4plus: A cost-effective BiCMOS manufacturing technology with elite passive enhancements optimized for 'silicon-based' RF-system-in-package environment

被引：23

作者：

Deixler, P ^{[1
]}

Letavic, T ^{[1
]}

Mahatdejkul, T ^{[1
]}

Bouttement, Y ^{[1
]}

Brock, R ^{[1
]}

Tan, PC ^{[1
]}

Saikumar, V ^{[1
]}

Rodriguez, A ^{[1
]}

Colclaser, R ^{[1
]}

Kellowan, P ^{[1
]}

Sun, H ^{[1
]}

Bell, N ^{[1
]}

Bower, D ^{[1
]}

Yao, A ^{[1
]}

van Langevelde, R ^{[1
]}

Vanhoucke, T ^{[1
]}

van Noort, WD ^{[1
]}

Hurkx, GAM ^{[1
]}

Crespo, D ^{[1
]}

Biard, C ^{[1
]}

Bardy, S ^{[1
]}

Slotboom, JW ^{[1
]}

机构：

[1] Philips RF Device Modeling Grp, San Jose, CA USA

来源：

PROCEEDINGS OF THE 2005 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2005年

关键词：

D O I：

10.1109/BIPOL.2005.1555249

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

QUBiC4plus is a RF-BiCMOS production technology tailored for 'silicon-based' RF-SiP. The device menu includes 3 varactor styles, 7 resistor types, novel complimentary 24V PMU devices, Hi-k MIM capacitors, RC-triggered ESD protection and a choice between all-silicon, SiGe and SiGe:C bipolar transistors. Buried-p+ guardrings, DTI and very-high resistivity substrates ensure excellent circuit-block isolation and high-quality inductors. The advanced design flow features state-of-the-art models.

引用

页码：272 / 275

页数：4

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