Effects of high-pressure high-temperature treatment on the thermoelectric properties of PbTe

被引：21

作者：

McGuire, Michael A. ^{[3
]}

Malik, Abds-Sami ^{[2
]}

DiSalvo, Francis J. ^{[1
]}

机构：

[1] Cornell Univ, Baker Lab, Dept Chem & Chem Biol, Ithaca, NY 14853 USA

[2] Diamond Innovat, Worthington, OH 43085 USA

[3] Cornell Univ, Dept Phys, Ithaca, NY 14853 USA

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2008年 / 460卷 / 1-2期

关键词：

semiconductors; point defects; electrical transport; heat conduction;

D O I：

10.1016/j.jallcom.2007.05.072

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Changes in the thermoelectric properties of nominally undoped stoichiometric PbTe caused by high-pressure high-temperature (HPHT) treatment near 6.5 GPa and 900 degrees C are reported. Comparison of the electrical resistivity, thermopower, and thermal conductivity suggest that the carrier concentration and lattice defect density are decreased by HPHT treatment. Annealing the treated samples at intermediate temperatures (500-600 degrees C) reversed the changes. These observations are consistent with Pb vacancies being "squeezed out" by the applied pressure, and subsequently reintroduced by annealing. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：8 / 12

页数：5

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